Femtosecond Laser Process Targets Depth-Controlled 4H-SiC Wafer Slicing (Texas A&M, KIMM, UST)

Quantitative evaluation of single-grating phase-contrast imaging with a femtosecond laser–plasma Kα X-ray source

We present the first implementation of an X-ray phase-contrast imaging approach using single 2D-grating phase retrieval and a quasi-monochromatic hard K$\alpha$ X-ray source generated \textit{via} high-intensity femtosecond laser–plasma interaction. To highlight its pertinence, we demonstrate qua...

Femtosecond Laser Process Targets Depth-Controlled 4H-SiC Wafer Slicing (Texas A&M, KIMM, UST)

Researchers from Texas A&M University, KIMM, and UST published a technical paper titled “Self-Focusing Control for Depth-Precise Wafer Slicing of 4H-SiC in Femtosecond Laser Processing.” Abstract Excerpt: “Femtosecond laser slicing for 4H-SiC wafers offers a non-contact processing approach to produce thin layers with low defects, while strong optical nonlinearities obscure the relationship between the laser parameters and the resulting slicing q…