CEA-Leti and ST Advance Silicon RF Integration

A path to fully monolithic silicon RF front-ends with 3D sequential integration

CEA-Leti and STMicroelectronics presented their results at IEDM 2025, highlighting key enablers for a new high-performance, versatile RF Si platform that co-integrates active and passive devices for RF and Optical FEMTheir paper outlines the 3D sequential integration of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs), RF SOI switches, and high-quality passives on a single wafer, creating a path to highly integrated, low-parasi…

CEA-Leti and ST advance silicon RF integration

CEA-Leti and STMicroelectronics have used IEDM 2025 in San Francisco to set out a route to fully monolithic silicon RF front-ends, combining high-performance active and passive devices on a single wafer through 3D sequential integration. The work targets next-generation RF and optical front-end modules for wireless and wireline communication systems. In their joint paper, “Unlocking High-Performance Si RF Platforms with SiGe HBT and RFSOI Switch…

CEA-Leti & STMicroelectronics’ Paper at IEDM 2025 Demonstrates Path to Fully Monolithic Silicon RF Front-Ends with 3D Sequential Integration

SAN FRANCISCO — Dec. 9, 2025 — CEA-Leti and STMicroelectronics today presented results at IEDM 2025 showcasing key enablers for a new high-performance and versatile RF Si platform cointegrating best-in-class active and passive devices used in RF and Optical FEM. Their paper details 3D sequential integration of silicon-germanium (SiGe) heterojunction bipolar transistors (HBT), RF SOI switches, and high-quality passives on a single wafer—opening a…