IIT Bhubaneswar Researchers Uncover Novel 2D Material For Advanced Electronics

IIT, US varsity researchers predict material to make electronic devices lighter

IIT Bhubaneswar and Virginia Commonwealth University predict 2D FeCl3 monolayer with rare i-wave altermagnetism for faster, energy-efficient spintronics.

IIT Bhubaneswar researchers discover rare magnetic state in 2D material - The Tribune

Researchers from the Indian Institute of Technology (IIT) Bhubaneswar, in collaboration with Virginia Commonwealth University, USA, have theoretically predicted a new two-dimensional material exhibiting i-wave altermagnetism.

IIT Bhubaneswar researchers discover rare magnetic state in 2D material

Bhubaneswar, Aug 11 (PTI) Researchers from the Indian Institute of Technology (IIT) Bhubaneswar, in collaboration with Virginia Commonwealth University, USA, have theoretically predicted a new two-dimensional material exhibiting i-wave altermagnetism. The finding could open new possibilities for developing faster, more compact and energy-efficient electronic devices, with potential applications in high-density memory, spin-based transistors, ter…

IIT Bhubaneswar Researchers Uncover Novel 2D Material For Advanced Electronics

Researchers from IIT Bhubaneswar and Virginia Commonwealth University have theoretically predicted a new two-dimensional material, a FeCl3 monolayer, exhibiting i-wave altermagnetism. This discovery holds significant potential for developing faster, more compact, and energy-efficient electronic devices, including applications in high-density memory, spintronics, and quantum technologies.

Slow Electrons Discovered in 2D Material Could Enable New Memory Devices

Scientists have discovered an unusual electronic state in the two-dimensional magnetic material Fe₅GeTe₂, where large groups of electrons move collectively at exceptionally low effective speeds while retaining quantum coherence. The finding challenges established theories of how electrons should interact in the material and could eventually lead to a new generation of memory devices that combine magnetic storage with quantum behavior. The study,…

Discovery of 'slow' electrons in 2D material could lead to new memory device

Scientists found a quantum phenomenon in a two-dimensional magnet that could be relevant for memory storage.