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Scaling of 2D Semiconductor Nanoribbons for High Performance Transistors (Purdue, NUS et al.)
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Scaling of 2D Semiconductor Nanoribbons for High Performance Transistors (Purdue, NUS et al.)
A new technical paper titled “Scaling of Two-Dimensional Semiconductor Nanoribbons for High-Performance Electronics” was published by researchers at Purdue University, National University of Singapore, Nexstrom Pte. Ltd and Dankook University. Abstract “Monolayer transition metal dichalcogenide (TMD) field-effect transistors (FETs), with their atomically thin bodies, are promising candidates for future gate-all-around (GAA) nanoribbon architectu…
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