Key transistor for next-generation 3D stacked semiconductors operates without current leakage

Key transistor for next-generation 3D stacked semiconductors operates without current leakage

A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer Science at DGIST has developed "dual-modulated vertically stacked transistors" that operate stably without current leakage even in two-dimensional nanoscale channel structures. A study on this work is published in the journal Advanced Science.

DGIST Develops Key Transistor for Next-Generation 3D Stacked Semiconductors Based on Successful Development of a Novel Sandwich-Structured Transistor

A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer Science at DGIST (President Kunwoo Lee) has developed, for the first time in the world, “dual-modulated vertically stacked transistors” that operate stably without current leakage even in two-dimensional nanoscale channel structures. In recent years, the semiconductor industry has faced physical limitations as the demand to …