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Imec Debuts a Beyond-110GHz C-band GeSi Electro-Absorption Modulator on its 300mm Silicon Photonics Platform - Semiconductor Digest
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Imec Debuts a Beyond-110GHz C-band GeSi Electro-Absorption Modulator on its 300mm Silicon Photonics Platform - Semiconductor Digest
Imec – the research and innovation hub in nanoelectronics and digital technologies – today announced the successful demonstration of a beyond-110GHz C-band GeSi electro-absorption modulator, fabricated on its 300mm silicon photonics platform. Achieving a net data rate of 400Gb/s per lane and optimized for compactness, low latency, and high energy efficiency, imec’s modulator establishes the foundation for next-generation optical IM/DD (intensity…
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